Winbond W966D6HBG pSRAM
W966D6HBG
| Density | 4Mbit x16 CRAM | Status | |
|---|---|---|---|
| Vcc | 1.8V / 1.8V | Frequency | 133MHz / 70ns |
| Package | Temperature Range | -40~85c | |
| Feature List | W966D6HBG googleplus The is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. 产品特点 Supports asynchronous, page, and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ Random access time: 70ns Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns) tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz Low-power features: TCR, PAR, DPD Page mode READ access:Sixteen-word page size Interpage READ access: 70ns, Intrapage READ access: 20ns Package 54VFBGA | ||
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