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Winbond W968D6DAG pSRAM 256Mb

W968D6DAG

Density16Mbit x16 CRAMStatus
Vcc1.8V / 1.8VFrequency133MHz / 70ns
PackageTemperature Range-40~85c
Feature List

W968D6DAG

This is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

产品特点

Supports asynchronous and burst operations 

VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ 

Random access time: 70ns 

Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst 

Burst wrap or sequential 

Max clock rate: 133 MHz (tCLK = 7.5ns) 

tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz 

Low-power features: TCR, PAR, DPD 

Page mode READ access:Sixteen-word page size 

Interpage READ access: 70ns, Intrapage READ access: 20ns

Package 54VFBGA

编辑:admin  最后修改时间:2019-07-07   浏览:5

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