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村田制作所推出一款超小型金属标签(型号：LXMSJZNCMF-198)的早期版本，以便使用UHF RFID技术跟踪金属物品。这款小标签主要用于管理手术工具等小型金属物品。此外，村田还推出了名为RFID系统管理员(RSA)的中间件，这一中间件是由村田收购的ID-Solutions开发的。RSA支持企业IT系统及用于读取标签的RFID读卡器及打[详细]
The W632GU6MB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.35V(typ.), VDD, VDDQ=1.283V to 1.45VBackward compatible to VDD, VDDQ=1.5V ± 0.075 VDouble Data Rate architecture: two data transfe[详细]
The W632GG6MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[详细]
The W632GG8MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[详细]
The W632GU8MB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data trans[详细]
The W631GG6MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[详细]
The W631GG8MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[详细]
The W631GU6MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[详细]
The W631GU8MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[详细]
The W6351G6KB is a 512M bits DDR3 SDRAM and speed involving -12 and -15产品特点Double Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefetch architectureCAS Latency: 6, 8, 9, 10 and 11Burst length 8 (BL8) and burst chop 4 (BC[详细]
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