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This is a 512Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 2Gb Low Power DDR3 SDRAM organized as 16M words x 4 banks x 32bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x32Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD [详细]
This is a 2Gb Low Power DDR3 SDRAM organized as 32M words x 4 banks x 16bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x16 Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD[详细]
苹果(Apple)iPhone 8将采无线充电，可望带动无线充电风潮，因应充电方式改变，金属背盖将被玻璃及陶瓷等材质取代，然传统加工采胶合方式，良率低且成本高，近期机壳材料厂推PDC(Physical Direct Connection)工法，备受业界关注。 苹果向来引领3C产品设计潮流，苹果从iPhone 5之后，机壳背盖就采[详细]
全球手机芯片大厂高通（Qualcomm）11日宣布，将于本周内将发布将时脉提高至2.4GHz的Snapdragon 820旗舰处理器后续产品Snapdragon 821（MSM8996Pro）。高通表示，Snapdragon 821是以Snapdragon 820技术为基础所设计的全新款处理器，设计锁定更快速、更省电，以及更强大[详细]
原厂料号 EMK042CG2R7CD-W 品牌 太阳诱电 | TaiyoYuden 容量（Capacitance） 2.7pF 精度（Tolerance） ±0.25pF 额定电压（Voltage） 16V 材质（Material） [详细]
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