ddr_颖特新科技

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2018-05华邦 W632GG6MB

The W632GG6MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[详细]

2018-05华邦 W632GG8MB

The W632GG8MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[详细]

2018-05华邦 W632GU8MB

The W632GU8MB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data trans[详细]

2018-05华邦 W631GG6MB

The W631GG6MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[详细]

2018-05华邦 W631GG8MB

The W631GG8MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[详细]

2018-05华邦 W631GU6MB

The W631GU6MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[详细]

2018-05华邦 W631GU8MB

The W631GU8MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[详细]

2018-05华邦 W6351G6KB

The W6351G6KB is a 512M bits DDR3 SDRAM and speed involving -12 and -15产品特点Double Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefetch architectureCAS Latency: 6, 8, 9, 10 and 11Burst length 8 (BL8) and burst chop 4 (BC[详细]

2018-05华邦 W97BH6LBVX

This is a 2Gb Low Power DDR2 SDRAM organized as 16M words x 8 banks x 16bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mod[详细]

2018-05Winbond W97BH2LBVX

This is a 2Gb Low Power DDR2 SDRAM organized as 8M words x 8 banks x 32bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode[详细]

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