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PPage Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
Page Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
Page Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
Page Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
Page Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
Page Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
Page Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
Page Read Time with ECC Enable: 50usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area[详细]
DFT : Design For TestabilityTTR :Test Time ReductionKGD: Known Good DieNAND Flash 芯片测试主要是为了筛选（Screen Out）出Flash阵列、译码器、寄存器的失效。测试流程（Test Flow）从wafer level，到single component level、module level，定义各项测试的次序，筛选出性能较差和失效的device，需要[详细]
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