PSRAM芯片_颖特新科技

最热知识

2019-07PSRAM与SRAM、DRAM的比较与优势

PSRAM是一种伪静态SRAM存储器，它具有类似SRAM的接口协议：给出地址、读、写命令，就可以实现存取，不像DRAM需要memory controller来控制内存单元定期数据刷新，接口简单；PSRAM的内核是DRAM架构：1T1C一个晶体管一个电容构成存储cell，而传统SRAM需要6T即六个晶体管构成一个存储cell。由此结合，他可以实现类S[详细]

2019-07供应EMLSI(JSC)PSRAM芯片EM7644SU16ASZP

PSRAM，全称Pseudo static random access memory，属于伪静态SRAM器件，内置内存颗粒和SDRAM的颗粒类似，器件外部接口和SRAM相似，不需要跟SDRAM一样复杂的控制器和刷新机制可以采用跟SRAM一样的接口模式外扩PSRAM器件。PSRAM芯片容量包括1Mbytex8，2Mbytex8，4Mbytex8，8Mbytex8四种，不能够与SDRAM的高密度容[详细]

2017-08Winbond W956D6KBK pSRAM

W956D6KBKThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[详细]

2015-03Winbond W956K6HBC pSRAM

W956K6HBCThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[详细]

2015-03Winbond W966K6HBG pSRAM

W966K6HBGfacebooktwitterlinkedingoogleplusThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]

2015-03Winbond W956D6HBC pSRAM

W956D6HBCfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, [详细]

2015-03Winbond W966D6HBG pSRAM

W966D6HBGfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]

2015-03Winbond W957D6HBC pSRAM

W957D6HBCfacebooktwitterlinkedingoogleplusThis a 128M bit CellularRAM™ compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点16-bit address/ data bus width, Address-High, Add[详细]

2015-03Winbond W967D6HBG pSRAM

This a 128M bit CellularRAM compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1[详细]

2015-03Winbond W958D6DBC pSRAM 256Mb

W958D6DBCfacebooktwitterlinkedingoogleplusThis is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations&nb[详细]

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