This is a 512Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 512Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 512Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]
This is a 2Gb Low Power DDR3 SDRAM organized as 16M words x 4 banks x 32bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x32Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD [详细]
This is a 2Gb Low Power DDR3 SDRAM organized as 32M words x 4 banks x 16bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x16 Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD[详细]
W956D6KBKThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[详细]
W949D2DBJAThis is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W949D2DBJXThis is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W949D6DBHAThis is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W949D6DBHXThis is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W94AD6KBHXThis is a 1Gb Low Power DDR SDRAM organized as 16M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Prog[详细]
W94AD2KBJXThis is a 1Gb Low Power DDR SDRAM organized as 8M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Progr[详细]
W94AD6KBHAThis is a 1Gb Low Power DDR SDRAM organized as 16M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Prog[详细]
W94AD2KBJAThis is a 1Gb Low Power DDR SDRAM organized as 8M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Progr[详细]
W987D6HBGXThis is a 128Mb Low Power SDR SDRAM organized as 2M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W987D2HBJXThis is a 128Mb Low Power SDR SDRAM organized as 1M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
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