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2015-04NAND FLASH闪存中SLC、MLC与TLC的比较

SLC与MLC属于两种不同类型的NAND FLASH存储器，广泛被用于手机、固态硬盘上。SLC全称Single-Level Cell ，即单层单元闪存。SLC存储1bit/cell，具有速度快寿命长的优点，但是容量做得不高。MLC全称Multi-Level Cell，即多层单元闪存。MLC存储2bit/cell，它速度一般寿命也一般，但是在同等体积下可以做得比SLC更高[详细]

2015-04nor flaSh是什么意思|nand flaSh是什么意思?

Nand-flash内存是flash内存的一种，其内部采用非线性宏单元模式，为固态大容量内存的实现提供了廉价有效的解决方案。Nand-flash存储器具有容量较大，改写速度快等优点，适用于大量数据的存储，因而在业界得到了越来越广泛的应用，如嵌入式产品中包括数码相机、MP3随身听记忆卡、体积小巧的U盘等。NOR型与NAND型[详细]

2015-04NAND闪存：闪迪48层第二代3D NAND闪存即将投产

颖特新讯：全球领先的闪存存储解决方案供应商闪迪公司（纳斯达克股票代码： SNDK）近日宣布成功开发出48层第二代3D NAND闪存(亦称为BiCS2)。计划于2015年下半年在位于日本四日市的合资工厂内投入试生产，于2016年进行规模化商业生产。闪迪存储技术部执行副总裁Siva Sivaram博士表示：“我们非常高兴能够发布第[详细]

2015-03Winbond(华邦) SDRAM命名规则

Winbond(华邦)存储芯片的编号和现代差不多，其编号规格为： W <12> <34> <56> <78>W代表Winbond；<12>代表显存类型，98为SDRAM，94为DDRRAM；<34>代表颗粒的容量（08=8Mbits，16=16Mbits，64=64Mbits，12=128Mbits，25=256Mbits）<56>代表颗粒的位宽（16=16bit，32=[详细]

2015-03Winbond W956K6HBC pSRAM

W956K6HBCThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[详细]

2015-03Winbond W966K6HBG pSRAM

W966K6HBGfacebooktwitterlinkedingoogleplusThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]

2015-03Winbond W956D6HBC pSRAM

W956D6HBCfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, [详细]

2015-03Winbond W966D6HBG pSRAM

W966D6HBGfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]

2015-03Winbond W957D6HBC pSRAM

W957D6HBCfacebooktwitterlinkedingoogleplusThis a 128M bit CellularRAM™ compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点16-bit address/ data bus width, Address-High, Add[详细]

2015-03Winbond W967D6HBG pSRAM

This a 128M bit CellularRAM compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1[详细]

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