W989D2KBJAThis is a 512Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 32bits产品特点Note: K-Die keeps supporting but D-Die is suggested for the new designPower supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, [详细]
W956K6HBCThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[详细]
W966K6HBGfacebooktwitterlinkedingoogleplusThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]
W956D6HBCfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, [详细]
W966D6HBGfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]
W957D6HBCfacebooktwitterlinkedingoogleplusThis a 128M bit CellularRAM™ compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点16-bit address/ data bus width, Address-High, Add[详细]
This a 128M bit CellularRAM compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1[详细]
W958D6DBCfacebooktwitterlinkedingoogleplusThis is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations&nb[详细]
W968D6DAGThis is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V[详细]
在内存生产厂商中,华邦是专业生产内存的厂家,特别在Flash领域。华邦Windbond的官网是:http://www.windbond.com,拥有三种语言体,分别是繁体中文、简体中文及英文。以下是Windbond三大事业群及产品介绍:华邦电子以DRAM产品事业群、闪存IC事业群及记忆IC制造事业群三大事业群为核心,不断追求产品与技术的创[详细]

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