第4页_Winbond/华邦_颖特新科技

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2019-06华邦W9751G8KB DDR2 512Mb内存

华邦512Mb DDR2内存[详细]

2019-06华邦W9751G6KB DDR2 512Mb内存

华邦512Mb DDR2内存[详细]

2019-06华邦W9725G8KB DDR2 256Mb内存

华邦256Mb DDR2内存[详细]

2019-06华邦W9725G6KB DDR2 256Mb内存

[详细]

2019-06华邦W9712G6KB DDR2 128Mb内存

华邦DDR2 128Mb[详细]

2018-11Winbond华邦25系列串口式NOR型闪存选型指南

华邦的w25x和w25q spiflash®多I/O的记忆特征的流行的串行外设接口（SPI），从512K至512M的容量，小的可擦除扇区和业界最高性能。的w25x家庭支持双SPI标准SPI时钟速率翻倍。w25q的家庭是一个“超集”在25X家族dual-i / O和quad-i / O SPI更高的性能。时钟速率高达104mhz实现416mhz等效（50M字节/秒的传输速率[详细]

The W632GU6MB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.35V(typ.), VDD, VDDQ=1.283V to 1.45VBackward compatible to VDD, VDDQ=1.5V ± 0.075 VDouble Data Rate architecture: two data transfe[详细]

2018-05华邦 W632GG6MB

The W632GG6MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[详细]

2018-05华邦 W632GG8MB

The W632GG8MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[详细]

2018-05华邦 W632GU8MB

The W632GU8MB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.产品特点Power Supply: VDD, VDDQ = 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data trans[详细]

2018-05华邦 W631GG6MB

The W631GG6MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[详细]

2018-05华邦 W631GG8MB

The W631GG8MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[详细]

2018-05华邦 W631GU6MB

The W631GU6MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[详细]

2018-05华邦 W631GU8MB

The W631GU8MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J产品特点Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[详细]

2018-05华邦 W6351G6KB

The W6351G6KB is a 512M bits DDR3 SDRAM and speed involving -12 and -15产品特点Double Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefetch architectureCAS Latency: 6, 8, 9, 10 and 11Burst length 8 (BL8) and burst chop 4 (BC[详细]

2018-05华邦 W25Q80NE

8M-bit 1.2V Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPIFeaturesDual/Quad Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 4,096 pages (256 bytes), page program in 1mS (typ.) Single/Dual/Quad Fast Read instructions&[详细]

2018-05华邦 W25Q80ND

8M-bit 1.2V/1.5V Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Dual/Quad Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 4,096 pages (256 bytes), page program in 1mS (typ.) Single/Dual/Quad Fast Read instruct[详细]

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