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128M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI产品特点Single/Dual/Quad SPI, QPI and Dual Transfer Rate (DTR) operations Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 65,536 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read wit[详细]
128M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI产品特点Single/Dual/Quad SPI and QPI operation Replay-Protected Monotonic Counter (RPMC) Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 65,536 pages (256 bytes), page program in 0.7mS (typ.) Cont[详细]
128M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI产品特点Single/Dual/Quad SPI and QPI operation Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 65,536 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 BByte Wrap QuaWinbond W25Q128FV" href="http://www.yingtexin.net/winbond/W25Q128FV.shtml" class="float-end">[详细]
128M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Dual/Quad Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 65,536 pages (256 bytes), page program in 0.7mS (typ.) Single/Dual/Quad Fast Read instructions 8/16/32/64byte [详细]
256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Single/Dual/Quad SPI, QPI and Dual Transfer Rate (DTR) operations 3 or 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (256 bytes), page program in 0.7mS (typ[详细]
W25Q257FV256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Single/Dual/Quad SPI, and QPI operations 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (256 bytes), page program in 0.7mS (typ.) 8/16/32/64byte wra[详细]
W25Q256FV256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Single/Dual/Quad SPI and QPI operation Flexible 3-Byte and 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (256 bytes), page program in 0.7mS (typ.) 华邦串口闪存W25Q256FV" href="http://www.yingtexin.net/winbond/W25Q256FV.shtml" class="float-end">[详细]
512M-bit Serial Flash Memory with MCP Operation, uniform 4KB sectors and Dual/Quad SPI产品特点MCP operation can be homogeneous or heterogeneous, with software die selection. Concurrent Operations offering, Read while Program/Erase and Multi-Die Program/Erase Single/Dual/Quad SPI, QP[详细]
W949D2DBJAThis is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W949D2DBJXThis is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W949D6DBHAThis is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W949D6DBHXThis is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W94AD6KBHXThis is a 1Gb Low Power DDR SDRAM organized as 16M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Prog[详细]
W94AD2KBJXThis is a 1Gb Low Power DDR SDRAM organized as 8M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Progr[详细]
W94AD6KBHAThis is a 1Gb Low Power DDR SDRAM organized as 16M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Prog[详细]
W94AD2KBJAThis is a 1Gb Low Power DDR SDRAM organized as 8M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Progr[详细]
W987D6HBGXThis is a 128Mb Low Power SDR SDRAM organized as 2M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W987D2HBJXThis is a 128Mb Low Power SDR SDRAM organized as 1M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W987D6HBGAThis is a 128Mb Low Power SDR SDRAM organized as 2M words x 4 banks x 16bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
W987D2HBJAThis is a 128Mb Low Power SDR SDRAM organized as 1M words x 4 banks x 32bits产品特点Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[详细]
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