第6页_Winbond/华邦_颖特新科技

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2018-05Winbond W978H6KBVX

This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[详细]

2018-05Winbond W978H2KBVX

This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[详细]

2018-05Winbond W978H6KBVA

This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]

2018-05Winbond W978H2KBVA

This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bitsPlease contact sales for automotive datasheet.产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[详细]

2018-05Winbond W63BH2MBVX

This is a 2Gb Low Power DDR3 SDRAM organized as 16M words x 4 banks x 32bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x32Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD [详细]

2018-05Winbond W63BH6MBVX

This is a 2Gb Low Power DDR3 SDRAM organized as 32M words x 4 banks x 16bits产品特点Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x16 Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD[详细]

2018-03华邦闪存代理提供W25Q64FW

64M-bit 1.8V的串行闪存，具有相同的4KB扇区和双/Quad SPI和QPI。产品特点Single/Dual/Quad SPI and QPI operation Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 32,768 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 Byte Wrap Quad Peripheral Interf[详细]

2018-03华邦供应商提供W25Q128FW串口式NOR型闪存

产品特点：128M-bit 1.8V序列闪存，具有统一的4KB扇区和双/Quad SPI和QPI。Single/Dual/Quad SPI and QPI operation Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 65,536 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 BByte Wrap Quad Peripheral inte[详细]

2018-03华邦公司《业绩-半导体》前2月营收年增17.74％

华邦电(2344)2018年2月含新唐科技等子公司，单月合并营收为38.29亿元，较1月减少7.64%，较去年同期增加14.26%。2018年1至2月合并营收为79.75亿元，较去年同期增加17.74%。华邦电子总经理詹东义于上季法说会表示，目前公司DRAM、FLASH两大记忆体占营收比重约各半，成为两个成长引擎。对今年DRAM、FLASH市场看法仍[详细]

2018-03华邦电子代理商介绍串口式 NOR 型闪存

华邦的w25x和w25q spiflash®多I/O的记忆特征的流行的串行外设接口（SPI），从512K位512M的点密度，小的可擦除扇区和业界最高性能。的w25x家庭支持双SPI标准SPI时钟速率翻倍。w25q的家庭是一个“超集”在25X家族dual-i / O和quad-i / O SPI更高的性能。时钟速率高达104mhz实现416mhz等效（50M字节/秒的传输速[详细]

2018-03提供华邦flash芯片W25Q16JVSSIQ 全系现货存储解决方案

W25Q16JVSSIQ是华邦flash芯片代理-深圳颖特新提供的一款供不应求的串口式NOR型存储器。Wibond华邦电子经过不断的技术创新与市场的洗礼，推出当前串口型NOR型闪存的最新型号W25Q16JVSSIQ。颖特新科技主要代理Winbond华邦NOR型闪存，备有大量现货，保证每一颗都出自Winbond华邦原厂。支持样品，批量。W25Q16JVSSI[详细]

2017-08Winbond W25X20CL

Density 2Mbit Voltage 2.3 - 3.6V Speed 104MHZ Package 150mil SOIC\VSOP Package WSON 5x6mm Package USON 2x3mm产品特点Single and Dual Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 1024 pages (256 bytes), page program in 0.4mS (typ.) [详细]

2017-08Winbond W25Q10EW

1M-bit 1.8V Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Dual/Quad Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 512 pages (256 bytes), page program in 0.4mS (typ.) Single/Dual/Quad Fast Read instructions&[详细]

2017-08Winbond W25X10CL

Density 1Mbit Voltage 2.3 - 3.6V Speed 104MHZ Package SOIC8 150mil Package USON8 2x3mm产品特点N/APackageSOIC8150mil,USON8 2X3mm,[详细]

2017-08Winbond W25X05CL

Density 512kbit Voltage 2.3 - 3.6V Speed 104MHZ Package 150mil SOIC\VSOP Package 173mil TSSOP Package WSON 5x6mm Package USON 2x3mm产品特点N/APackageSOIC8 150mil,TSSOP8 173mil, USON 2x3mm,[详细]

2017-08Winbond W25Q256JW

W25Q256JW256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Single/Dual/Quad SPI operations 3 or 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (256 bytes), page program in 0.7mS (typ.) Co[详细]

2017-08Winbond W25Q256JW-DTR

W25Q256JW-DTRfacebooktwitterlinkedingoogleplus256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI产品特点Single/Dual/Quad SPI, QPI and Dual Transfer Rate (DTR) operations 3 or 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasa[详细]

2017-08Winbond W25Q256JV-DTR

W25Q256JV-DTR256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI产品特点Single/Dual/Quad SPI, QPI and Dual Transfer Rate (DTR) operations 3 or 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (25[详细]

2017-08Winbond W25Q257JV

W25Q257JV256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI产品特点Single/Dual/Quad SPI, and QPI operations 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (256 bytes), page program in 0.7mS (typ.)&nbs[详细]

2017-08Winbond W956D6KBK pSRAM

W956D6KBKThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[详细]

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