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2015-03Winbond(华邦) SDRAM命名规则

Winbond(华邦)存储芯片的编号和现代差不多,其编号规格为: W <12> <34> <56> <78>W代表Winbond;<12>代表显存类型,98为SDRAM,94为DDRRAM;<34>代表颗粒的容量(08=8Mbits,16=16Mbits,64=64Mbits,12=128Mbits,25=256Mbits)<56>代表颗粒的位宽(16=16bit,32=[详细]


2015-03Winbond W956K6HBC pSRAM

W956K6HBCThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[详细]


2015-03Winbond W966K6HBG pSRAM

W966K6HBGfacebooktwitterlinkedingoogleplusThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]


2015-03Winbond W956D6HBC pSRAM

W956D6HBCfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, [详细]


2015-03Winbond W966D6HBG pSRAM

W966D6HBGfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operation[详细]


2015-03Winbond W957D6HBC pSRAM

W957D6HBCfacebooktwitterlinkedingoogleplusThis a 128M bit CellularRAM™ compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点16-bit address/ data bus width, Address-High, Add[详细]


2015-03Winbond W967D6HBG pSRAM

This a 128M bit CellularRAM compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous, page, and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1[详细]


2015-03Winbond W958D6DBC pSRAM 256Mb

W958D6DBCfacebooktwitterlinkedingoogleplusThis is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations&nb[详细]


2015-03Winbond W968D6DAG pSRAM 256Mb

W968D6DAGThis is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.产品特点Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V[详细]


2014-05Windbond官网及Windbond SRAM、Flash、DRAM芯片介绍

在内存生产厂商中,华邦是专业生产内存的厂家,特别在Flash领域。华邦Windbond的官网是:http://www.windbond.com,拥有三种语言体,分别是繁体中文、简体中文及英文。以下是Windbond三大事业群及产品介绍:华邦电子以DRAM产品事业群、闪存IC事业群及记忆IC制造事业群三大事业群为核心,不断追求产品与技术的创[详细]


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